* thermal circuit of 8 MOSFET follower stage
* set ambient temp
v1th ta 0 dc 25
* calculate instantaneous power dissipation
b1th 0 tjp i=abs((i(vpos2:x1))*(v(vdd2)-v(vout)))
b2th 0 tjn i=abs((i(vneg2:x1))*(v(vout)-v(vss2)))
* lumped model of positive NMOS bank
xthpjc tjp tcp ta thirfp240_4
rthpcs tcp ts 60m
* lumped model of negative PMOS bank
xthnjc tjn tcn ta thirfp240_4 
rthncs tcn ts 60m
* heatsink model mass=6.4kg
rthsa ts ta 0.1
cthsa ts ta 5.76
* individual transistor model included for reference
.subckt thirfp240 tj tc ref
rf1 tj t1 60.8721m
cf1 tj ref 1.5231m
rf2 t1 t2 125.9014m
cf2 t1 ref 6.5766m
rf3 t2 t3 295.8460m
cf3 t2 ref 11.5740m
rf4 t3 tc 347.3805m
cf4 t3 ref 103.6350m
.ends
* lumped transistor model actually used
.subckt thirfp240_4 tj tc ref
rf1 tj t1 15.218m
cf1 tj ref 6.0924m
rf2 t1 t2 31.4753m
cf2 t1 ref 26.3064m
rf3 t2 t3 73.9615m
cf3 t2 ref 46.296m
rf4 t3 tc 86.8451m
cf4 t3 ref 414.54m
.ends